Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > 2N7000BU

2N7000BU Sanyo Semiconductor/ON Semiconductor

2N7000BU
  • Part Number: 2N7000BU
  • Manufacturer: Sanyo Semiconductor/ON Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: 2N7000BU More Information
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Stock : 6358 Can Ship Immediately

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Qty Unit Price
1+: $0.41

Sub Total: $0.41

Minimum: 1 Multiples: 1
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Current price of 2N7000BU is for reference only,please send email to sales@tanssion.com to get the newest price.

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2N7000BU Information

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  • Datasheet
  • Product Details
  • Reviews

Sanyo Semiconductor/ON Semiconductor 2N7000BU technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor 2N7000BU.

  • Type
    Parameter
  • 2N7000BU
  • Manufacturer
    Sanyo Semiconductor/ON Semiconductor
  • Pricing(USD)
    $0.41
  • Remark
    Manufacturer: Sanyo Semiconductor/ON Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Fall Time
    10 ns
  • Rise Time
    10 ns
  • Resistance
    5 Ω
  • Case/Package
    TO-92
  • Number of Pins
    3
  • Input Capacitance
    50 pF
  • Threshold Voltage
    3.9 V
  • Number of Elements
    1
  • Turn-Off Delay Time
    10 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    1.2 Ω
  • Continuous Drain Current (ID)
    200 mA
  • Drain to Source Voltage (Vdss)
    60 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • 2N7000BU.pdf
  • 6358 In Stock
  • Applications
  • Height
    5.33 mm
  • Packaging
    Bulk
  • Rds On Max
    5 Ω
  • Schedule B
    8541210080
  • Current Rating
    200 mA
  • Contact Plating
    Copper, Silver, Tin
  • Power Dissipation
    400 mW
  • Number of Channels
    1
  • Turn-On Delay Time
    10 ns
  • Voltage Rating (DC)
    60 V
  • Max Power Dissipation
    400 mW
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Max Junction Temperature (Tj)
    150 °C
  • Drain to Source Breakdown Voltage
    60 V

Download datasheets and manufacturer documentation for Sanyo Semiconductor/ON Semiconductor 2N7000BU

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2N7000BU Overview

2N7000BU is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2N7000BU high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2N7000BU is widely used in Lighting,Data center & enterprise computing. It is manufactured by Sanyo Semiconductor/ON Semiconductor and distributed by Fans, Tanssion and other distributors. 2N7000BU can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of 2N7000BU is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order 2N7000BU from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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2N7000BU Information

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Sanyo Semiconductor/ON Semiconductor 2N7000BU technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor 2N7000BU.

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2N7000 2N7000 Sanyo Semiconductor/ON Semiconductor

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100+: $0.4018

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100+: $0.49

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2N7000BU 2N7000BU Sanyo Semiconductor/ON Semiconductor

1+: $0.41

10+: $0.4059

100+: $0.4018

500+: $0.3977

1000+: $0.3936

Lighting
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2N7000BU_T 2N7000BU_T Sanyo Semiconductor/ON Semiconductor

1+: $0

10+: $0

100+: $0

500+: $0

1000+: $0

Broadband fixed line access
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Home theater & entertainment

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The three parts on the right have similar specifications to Sanyo Semiconductor/ON Semiconductor 2N7000BU.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
    -
The three parts on the right have similar specifications to Sanyo Semiconductor/ON Semiconductor 2N7000BU
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  • 2N7000BU Picture
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