Di***ey : MRFE6VP5150NR1 Datasheet by NXP USA Inc. | Digi-Key...
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NX***emiconductors : MRFE6VP5150NR1 MRFE6VP5150GNR1
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital),.
NX***emiconductors : MRFE6VP5150N Product Information
MRFE6VP5150NR1. 12NC: 935312397528. Not R for New Designs. Packing: REEL-Reel 13" Q2/T3 in Drypack; Min. Package Quantity: 500; Min.
Di***ey : MRFE6VP5150NR1 NXP USA Inc.
Order today, ships today. MRFE6VP5150NR1 – RF Mosfet 50 V 100 mA 230MHz 26.1dB 150W TO-270 WB-4 from NXP USA Inc.. Pricing and Availability on millions of ...
Mo***r Electronics : MRFE6VP5150NR1 NXP Semiconductors
Mfr. #:. MRFE6VP5150NR1 · Mfr.: NXP Semiconductors · Description: RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V ...
Ar*** Electronics : MRFE6VP5150NR1 by NXP Semiconductors | RF FETs
The RW612 is a highly integrated, low-power tri-radio wireless MCU with an integrated MCU and Wi-Fi® 6 + Bluetooth® Low Energy (LE) 5.3 / 15 radios ...
Oc***art : MRFE6VP5150NR1 - NXP Semiconductors
Transistor, Rf, 133V, To-270Wb-4; Drain Source Voltage Vds:133Vdc; Continuous Drain Current Id:-; Power Dissipation Pd:952W; Operating Frequency Min:1.8Mhz; ...
RF*** : MRFE6VP5150NR1 NXP RF Power Transistor
Part Number: MRFE6VP5150NR1 Manufacturer: NXP Product Description: RF Power Transistor,1.8 to 600 MHz, 150 W, Typ Gain in dB is 26.3 @ 230 MHz, 50 V, LDMOS, ...
Fu***e Electronics : MRFE6VP5150NR1 in Std. Mfr. Pkg by NXP | Transceiver ICs
NXP | MRFE6VP5150NR1 · MRFE6VP5150 Series 50 V 1.8-600 MHz RF Power LDMOS Transistor - TO-270WB-4 · Available Packaging · Available Packaging.