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IPL65R1K5C6SATMA1 Infineon Technologies MOSFET N-Ch 650V 3A ThinPAK 5x6 datasheet, inventory, & pricing.
In***eon Technologies : Datasheet IPL65R1K5C6S
1 Description. CoolMOS™ is a revolutionary technology for high voltage power. MOSFETs, designed according to the superjunction (SJ) principle and.
Di***ey : IPL65R1K5C6SATMA1 Infineon Technologies
Order today, ships today. IPL65R1K5C6SATMA1 – N-Channel 650 V 3A (Tc) 26.6W (Tc) Surface Mount PG-TSON-8-2 from Infineon Technologies.
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Infineon IPL65R1K5C6SATMA1 ; Input Capacitance, 225 pF ; Max Dual Supply Voltage, 650 V ; Max Operating Temperature, 150 °C ; Max Power Dissipation, 26.6 W ; Min ...
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Infineon IPL65R1K5C6SATMA1 technical specifications, attributes, and parameters. Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R. The new CoolMOS™ ThinPAK 5x6 ...
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IPL65R1K5C6SATMA1 ; Current - Continuous Drain (Id) @ 25°C : 3A (Tc) ; Drain to Source Voltage (Vdss) : 650V ; Drive Voltage (Max Rds On, Min Rds On) : 10V.
On***c Electronics : IPL65R1K5C6S Infineon Electronic
Description, Details, Operation. Product Category, General MOSFET. Moisture Level, 1 Ohms. Rds On(Max)@Id,Vgs, 1500mΩ. Drain-source voltage Vds, 650V.
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ICPlanet Integrated Circuits IPL65R1K5C6SATMA1 IC Chip IPL65R1K5C6S ; Product quality. Brand and Original ; Product Inventory. Spot goods ; Place of Shipment.
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INFINEON TECHNOLOGIES IPL65R1K5C6SATMA1 | Tranzystor: N-MOSFET; unipolarny; 650V; 3A; 26,6W; PG-VSON-4 - Produkt dostępny w Transfer Multisort Elektronik.