Di***ey : APTGT50DH170TG Microchip Technology
Order today, ships today. APTGT50DH170TG – IGBT Module Trench Field Stop Asymmetrical Bridge 1700 V 75 A 312 W Chassis Mount SP4 from Microchip Technology.
Mi***chip Technology : APTGT50DH170TG
Features. • Trench + Field Stop IGBT3Technology. - Low voltage drop. - Low tail current. - Switching frequency up to 20 kHz. - Soft recovery parallel diodes.
Mi***semi : APTGT50DH170TG | Microsemi
This part can be found in the following product categories: Power Discretes & Modules · Power Modules · IGBT Modules · Chopper · Power Discretes & Modules ...
di***ey : APTGT50DH170TG Microchip Technology
Order today, ships today. APTGT50DH170TG – IGBT Module Trench Field Stop Asymmetrical Bridge 1700 V 75 A 312 W Chassis Mount SP4 from Microchip Technology.
Ar*** Electronics : Microchip Technology APTGT50DH170TG IGBT Modules
Buy APTGT50DH170TG with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other IGBT Modules.
Da***heetsPDF : APTGT50DH170TG Datasheet | Microsemi Corporation
APTGT50DH170TG Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 DataSheet4U = 1700V IC = 50A @ Tc = 80°C ...
Da***heetsPDF : APTGT50DH170TG IGBT Datasheet pdf - Power-Module ...
APTGT50DH170TG Asymmetrical - Bridge Tre nch + Field Stop IGBT® Power Module VB US VBUS SENSE Q1 G1 CR3 www. DataSheet4 U..comVCES = 1700V IC = 50A @ Tc = 80 ...
se*** : APTGT50DH170TG Microchip Technology
APTGT50DH170TG ; Type of: IGBT-Trench/Fieldstop ; IGBT Full Silicon. Configuration: ; Asymetrical Bridge. Construction: ; 2*IGBT+4*D · Number of circuits ( ...
Al***ba : Integrated Circuit Aptgt50dh170tg Transistors Igbts Modules
Integrated Circuit APTGT50DH170TG transistors igbts modules ; Configuration: Asymmetrical Bridge ; Vce(on) (Max) @ Vge, Ic: 2.4V 15V, 50A ; Input Capacitance (Cies) ...
Mo***r Electronics : APTGT50DH170TG Microchip Technology
Producto: IGBT Silicon Modules ; Configuración: Dual ; Máx. voltaje VCEO colector-emisor: 1.7 kV ; Voltaje de saturación colector-emisor: 2 V.