In***eon Technologies : IRGPS40B120UD
Aug 18, 2004 — IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105. TAC Fax: (310) 252-7903. Visit us at irf...
Di***ey : IRGPS40B120UDP Infineon Technologies
IRGPS40B120UDP ; Current - Collector Pulsed (Icm). 160 A ; Vce(on) (Max) @ Vge, Ic. 3.7V @ 15V, 50A ; Power - Max. 595 W ; Switching Energy. 1.4mJ (on), 1.65mJ (off).
Di***ey : IRGPS40B120UDP Datasheet by Infineon Technologies
IRGPS40B120UDP Datasheet by Infineon Technologies ; Parameter Max. Units. VCES Collector-to-Emitter Voltage ; @ TC = 25°C Continuous Collector Current 80. IC @ TC ...
Mo***r Electronics : IRGPS40B120UDP Infineon Technologies
Specifications ; Mounting Style: Through Hole ; Configuration: Single ; Collector- Emitter Voltage VCEO Max: 1.2 kV ; Collector-Emitter Saturation Voltage: 3.5 V.
AL***TASHEET : IRGPS40B120UDP Datasheet(PDF) - International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE, IRGPS40B120UDP Datasheet, IRGPS40B120UDP circuit, IRGPS40B120UDP data sheet : IRF, ...
Ro***ster Electronics : Part IRGPS40B120UDP
Part Number, IRGPS40B120UDP ; Description, IRGPS40B120 - Discrete IGBT with Anti-Parallel Diode ; RoHS, YES ; Lifecycle Status, OBS ; Part Type, IGBT.
Oc***art : IRGPS40B120UDP Infineon - IGBTs - Distributors, Price ...
Physical. Mount, Through Hole. Number of Pins, 3. Technical. Collector Emitter Breakdown Voltage, 1.2 kV. Collector Emitter Saturation Voltage, 3.39 V.
Da***heetsPDF : IRGPS40B120UDP Datasheet | International Rectifier
IRGPS40B120UDP. Part Number, IRGPS40B120UDP. Description, Insulated Gate Bipolar Transistor. Feature, www. DataSheet4U..comPD- 95967 ...
TM*** : IRGPS40B120UDP INFINEON TECHNOLOGIES - Transistor
INFINEON TECHNOLOGIES IRGPS40B120UDP | Transistor: IGBT; 1.2kV; 80A; 595W; SUPER247; single transistor - This product is available in Transfer Multisort ...