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Mo***r Electronics : APT25GP90BDQ1G Microchip Technology
APT25GP90BDQ1G Microchip Technology IGBT Transistors FG, IGBT, 900V, TO-247, RoHS datasheet, inventory, & pricing.
Oc***art : APT25GP90BDQ1G | Distributors, Price, and ...
Physical. Case/Package, TO-247-3. Mount, Through Hole. Technical. Collector Emitter Breakdown Voltage, 900 V. Collector Emitter Voltage (VCEO), 900 V.
AL***TASHEET : APT25GP90BDQ1G Datasheet(PDF) - Advanced Power ...
Part No. APT25GP90BDQ1G. Download, APT25GP90BDQ1G Click to view. File Size, 442.01 Kbytes. Page, 9 Pages. Manufacturer, ADPOW [Advanced Power Technology].
Mi***semi : APT25GP90BDQ1G (#75098)
APT25GP90BDQ1G (#75098) ; Package Carrier: Tube ; Unit. Collector to Emitter Saturation Voltage, V · 3.2, V · Collector-Emitter Breakdown Voltage (VGE = 0 V), V(BR) ...
Mi***chip Technology : POWER MOS 7® IGBT
APT25GP90BDQ1G*. *G Denotes RoHS, Pb Free Terminal Finish. ®. C. E. G. The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
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Order today, ships today. APT25GP90BDQ1G – IGBT PT 900 V 72 A 417 W Through Hole TO-247 [B] from Microchip Technology. Pricing and Availability on millions ...
Al***ransistors. Datasheet : APT25GP90BDQ1G IGBT. Datasheet pdf - Equivalent
Equivalent. Type Designator: APT25GP90BDQ1G. Type: IGBT. Type of IGBT Channel: N-Channel. Maximum Power Dissipation (Pc), W: 417.
TM*** : APT25GP90BDQ1G MICROCHIP (MICROSEMI) - IGBT
MICROCHIP (MICROSEMI) APT25GP90BDQ1G | Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 - This product is available in Transfer Multisort Elektronik.
TM*** : APT25GP90BDQ1G MICROCHIP (MICROSEMI) - Transistor
Specification ; Type of transistor. IGBT ; Technology. POWER MOS 7®, PT ; Collector-emitter voltage. 900V ; Collector current. 36A ; Power dissipation. 417W.
Al***bout Circuits : APT25GP90BDQ1G Microchip - Datasheet PDF & ...
Download the APT25GP90BDQ1G datasheet from Microchip. Trans IGBT Chip N-CH 900V 72A 417000mW 3-Pin(3+Tab) TO-247 Tube.